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| ISSUED DATE :2005/07/14 REVISED DATE : G B AV 1 5 1 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A The GBAV151 is designed for ultra high speed switching application. Description Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings (At TA = 25 : unless otherwise specified) Parameter Max. Peak Reverse Voltage Max. Reverse Voltage Max. Average Forward Rectified Current Non-Repetitive Peak Forward surge Current @Tp =1.0us @Tp =1.0s Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR Ratings 40 40 100 225 500 225 150 -55 ~ +150 Unit V V mA mA mW : : Io IFSM PD TJ TSTG Electrical Characteristics (At TA = 25 : unless otherwise noted) Characteristics Reverse Breakdown Voltage Forward Voltage Reverse Voltage Leakage Current Diode Capacitance Reverse Recovery Time (Figure 1) Symbol V(BR)R VF Min. 40 Max. 1.2 100 2.0 3.0 Unit V V nA pF ns Test Conditions IR=100 A IF=100mA VR=35V VR=0V, f=1.0MHz IR CD trr IF=10mA, VR=6V, RL=100 , Irr=0.1IR 1/2 ISSUED DATE :2005/07/14 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2 |
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